M2035S-E3 - Schottky Barrier Rectifier

Vishay

Key Features

Trench MOS Schottky technology.
Power pack.
Guardring for overvoltage protection.
Lower power losses, high efficiency.
Low forward voltage drop.
High forward surge capability.
High frequency operation.
Solder dip 275 °C max.10 s, per JESD 22-B106.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

M2035S-E3 schottky barrier rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	M2035S-E3
Manufacturer	Vishay
File Size	113.18 KB
Description	Schottky Barrier Rectifier
Datasheet	M2035S-E3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com M2035S-E3, M2045S-E3 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB 3 2 1 12 3 CASE PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 35 V, 45 V IFSM VF at IF = 20 A 200 A 0.55 V TJ max. 150 °C Package TO-220AB Diode variations Single die FEATURES • Trench MOS Schottky technology • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.