Datasheet Summary
.vishay.
M2035S-E3, M2045S-E3
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AB
3 2 1
3 CASE
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
35 V, 45 V
IFSM VF at IF = 20 A
200 A 0.55 V
TJ max.
150 °C
Package
TO-220AB
Diode variations
Single die
Features
- Trench MOS Schottky technology
- Power pack
- Guardring for overvoltage protection
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max.10 s, per JESD 22-B106
- Material categorization: For definitions of pliance please see .vishay./doc?99912...