MBR10100CT Description
MBR1090CT, MBR10100CT Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 5.0 A 90 V, 100 V 120 A 0.75 V 150 °C TO-220AB Diode variation Dual mon cathode.
MBR10100CT Key Features
- Trench MOS Schottky technology
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Material categorization: for definitions of pliance
MBR10100CT Applications
- halogen-free, RoHS-pliant, and mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whi