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MBR20100CT-M3 Datasheet Dual High Voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com MBR2090CT-M3, MBR20100CT-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 10 A 90 V, 100 V 150 A 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Trench MOS Schottky technology.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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