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MBR2090CT-M3, MBR20100CT-M3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-220AB
PIN 1 PIN 3
3 2 1
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max. Package
2 x 10 A 90 V, 100 V
150 A 0.65 V 150 °C TO-220AB
Diode variation
Common cathode
FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.