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MBRB1035 - High Performance Schottky Rectifier

Download the MBRB1035 datasheet PDF. This datasheet also covers the MBRB1035-1 variant, as both devices belong to the same high performance schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

General Description

This Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Key Features

  • 150 °C TJ operation.
  • TO-220 and D2PAK packages.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for defini.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBRB1035-1-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBRB1035
Manufacturer Vishay
File Size 161.87 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet MBRB1035 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com VS-MBRB1035-M3, VS-MBRB1045-M3 Vishay Semiconductors High Performance Schottky Rectifier, 10 A Base cathode 2 2 1 3 D2PAK (TO-263AB) 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM TJ max. EAS Package 10 A 35 V, 45 V 0.