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MBRF20100CT-E3 - Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

Download the MBRF20100CT-E3 datasheet PDF. This datasheet also covers the MBR2090CT-E3 variant, as both devices belong to the same dual common-cathode high voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Trench MOS Schottky technology.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR2090CT-E3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBRF20100CT-E3
Manufacturer Vishay
File Size 204.12 KB
Description Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet MBRF20100CT-E3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier TO-220AB TMBS® ITO-220AB MBR2090CT MBR20100CT PIN 1 PIN 2 3 2 1 MBRF2090CT MBRF20100CT PIN 1 PIN 2 PIN 3 CASE PIN 3 D2PAK (TO-263AB) K 123 2 1 MBRB2090CT MBRB20100CT PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package Circuit configuration 2 x 10 A 90 V to 100 V 150 A 0.