MGDT100100 - Miniaturized Gate Drive Planar Transformers

Vishay

Key Features

Deliver MOSFET / IGBT gate power and timing signals simultaneously Available.
Directly drive high side MOSFETs / IGBTs on busses up to 1200 V.
Excellent rise time, overshoot, and peak current characteristics.
8 mm minimum creepage and clearance from drive to gates.
Low profile planar package.
LF and SM versions are RoHS-compliant.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.

MGDT100100 miniaturized gate drive planar transformers by Vishay - Datasheet Preview

Datasheet Details

Part number	MGDT100100
Manufacturer	Vishay
File Size	97.14 KB
Description	Miniaturized Gate Drive Planar Transformers
Datasheet	MGDT100100 Datasheet

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MGDT100100-SM	Miniaturized Gate Drive Planar Transformers
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www.vishay.com MGDT Series Vishay Custom Magnetics Miniaturized Gate Drive Planar Transformers ABSOLUTE MAXIMUM RATINGS PARAMETER CONDITIONS LIMITS UNITS Dielectric withstand voltage Drive to gate, 1 min Gate to gate, 1 min 3750 2500 VAC VAC Total power dissipation (1) TA = 25 °C 2.0 W Operating temperature (2) Continuous -55 to +125 °C Storage temperature Continuous -55 to +130 °C Frequency 100 to 500 kHz Size (L x W x H) 20.57 x 18.42 x 11.43 mm Terminals Through-hole and surface-mount Note (1) Derate at 33.