RG2B Description
RG2A thru RG2M Vishay Semiconductors formerly General Semiconductor Glass Passivated Fast Switching Rectifier 0.034 (0.86) 0.028 (0.71) DIA.
RG2B Key Features
- High temperature metallurgically bonded construction
- Hermetically sealed package
- Cavity-free glass passivated junction
- 1.0 ampere operation at TA=55°C with no thermal runaway
- Typical IR less than 0.1µA
- Fast switching for high efficiency
- High temperature soldering guaranteed
- Brazed-lead assembly is covered by Patent No. 3,930,306