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SE30DT12 - Surface-Mount High Voltage Rectifier

Key Features

  • Creepage and clearance distance 3.7 mm typical Available.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Oxide planar chip junction.
  • Low forward voltage drop.
  • AEC-Q101 qualified.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SE30DT12
Manufacturer Vishay
File Size 139.42 KB
Description Surface-Mount High Voltage Rectifier
Datasheet download datasheet SE30DT12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SE30DT12 Vishay General Semiconductor Surface-Mount High Voltage Rectifier eSMP® Series SMPD 2L K 1 2 Top View 1 2 Bottom View K LINKS TO ADDITIONAL RESOURCES EDA / CAD PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A (TJ = 150 °C) IR TJ max. Package 30 A 1200 V 300 A 1.01 V 10 μA 175 °C SMPD 2L Circuit configuration Single FEATURES • Creepage and clearance distance 3.7 mm typical Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.