SE30DT12 Overview
SE30DT12 Vishay General Semiconductor Surface-Mount High Voltage Rectifier eSMP® Series SMPD 2L K 1 2 Top View 1 2 Bottom View K LINKS TO ADDITIONAL RESOURCES EDA / CAD PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A (TJ = 150 °C) IR TJ max. Package 30 A 1200 V 300 A 1.01 V 10 μA 175 °C SMPD 2L Circuit configuration Single.
SE30DT12 Key Features
- Creepage and clearance distance 3.7 mm typical
- Very low profile
- typical height of 1.7 mm
- Ideal for automated placement
- Oxide planar chip junction
- Low forward voltage drop
- AEC-Q101 qualified
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- Material categorization: for definitions of pliance please see .vishay./doc?99912