Vishay SI1026X
N-Channel MOSFET
FEATURES
D D D D D D Low On-Resistance: 1.40 W Low Threshold: 2 V (typ) Low Input Capacitance: 30 pF Fast Switching Speed: 15 ns (typ) Low Input and Output Leakage Miniature Package BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Small Board AreaAPPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays SC-89 S1 1 6 D1 G1 2 5 G2 Marking Code: E D2 3 4 S2 Top ViewABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (diode conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71434 S-03518—Rev. A, 23-Apr-01 TA = 25_C TA = 85...