Vishay SI1039X
The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.| Part No. | SI1039X |
|---|---|
| Datasheet | SI1039X Download |
| Manufacturer |  Vishay |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 71771 S-50151Rev. B, 07-Feb-05 1 SPICE Device Model Si1039X Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition Simulated Data 0.82 25 0.136 0.187 0.255 3.5 −0.74 Measured Data Unit VGS(th) ID(on)...
