Vishay SI1403DL
P-Channel 2.5-V (G-S) MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C ID IDM IS PD TJ, Tstg –0.8 0.625 0.400 –55 to 150 Symbol VDS VGS 5 secs Steady State –20 "12 Unit V "1.5 "1.2 "5 "1.4 "1.0 A –0.8 0.568 W 0.295 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71072 S-01559—Rev. B, 17-Jul-00 S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 165 180 105 Maximum 200 220 130 Unit _C/W 2-1 Si1403DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain C...