Vishay SI1419DH
P-Channel 200-V (D-S) MOSFET
| Part No. | SI1419DH |
|---|---|
| Datasheet | SI1419DH Download |
| Manufacturer |  Vishay |
| Description | P-Channel 200-V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFETS
● Small, Thermally Enhanced SC-70 Package
● Ultra Low On-Resistance
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Active Clamp Circuits in dc-to-dc Power Supplies S G D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 85 °C L = 0.1 mH TA = 25 °C TA = 85 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg - 200 ± 20 - 0.38 - 0.3 - 0.27 - 0.22 - 0.5 - 1.3 - 0.83 - 1.9 0.18 1.56 1.0 0.81 0.52 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. t≤5s Steady State Steady State Symbol RthJA RthJF Document Number: 73241 S10-0646-Rev.
