Vishay SI1900DL
Dual N-Channel MOSFET
| Part No. | SI1900DL |
|---|---|
| Datasheet | SI1900DL Download |
| Manufacturer |  Vishay |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code YY PB XX Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1900DL-T1-E3 (Lead (Pb)-free) Si1900DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 5s Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Current Continuous Source-Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg 0.63 0.45 0.25 0.30 0.16 Steady State 30 ± 20 0.59 0.43 1.0 0.23 0.27 0.14 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Maximum Junction-to-Foot (Drain) Steady State Notes: a. Surface mounted on 1" x 1" FR4 board.
