Vishay SI1902DL
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Si1902DL Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V VDS = 16 VGS = 0 V, TJ = 85°C On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 0.66 A VGS = 2.5 V, ID = 0.40 A Forward Transconductancea gfs VDS = 10 V, ID =...
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