Vishay SI1926DL
Dual N-Channel MOSFET
| Part No. | SI1926DL |
|---|---|
| Datasheet | SI1926DL Download |
| Manufacturer |  Vishay |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg Tested
● ESD Protected: 1800 V
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code PD XX YY G1 2 5 G2● Low Power Load Switch D1 D2 D2 3 4 S2 Lot Traceability and Date Code Part # Code G1 G2 Top View Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free) Si1926DL-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 60 ± 20 0.37 0.30 0.34b, c 0.27b, c 0.65 0.43 0.25b, c 0.51 0.33 0.30b, c 0.20b, c - 55 to 150 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a.
