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SI2303ADS Datasheet PDF

Vishay SI2303ADS

P-Channel 30-V (D-S) MOSFET

Part No. SI2303ADS
Datasheet SI2303ADS Download
Manufacturer
Vishay
Description P-Channel 30-V (D-S) MOSFET
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SI2303ADS datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS –0.75 0.9 0.57 –55 to 150 Symbol VDS VGS 5 sec –30 "20 –1.4 –1.1 –10 Steady State Unit V –1.3 –1.0 A –0.6 0.7 0.45 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: Document Number: 71837 S-20617—Rev. B, 29-Apr-02 RthJA Symbol Typical 115 140 Maximum 140 175 Unit _C/W 1 Si2303ADS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage G...
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