Vishay SI2311DS
P-Channel MOSFET
| Part No. | SI2311DS |
|---|---|
| Datasheet | SI2311DS Download |
| Manufacturer |  Vishay |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free Option Available● TrenchFET® Power MOSFET
APPLICATIONS
● Load Switch RoHS COMPLIANT TO-236 (SOT-23) G1 S2 3D Top View Si2311DS (C1)* * Marking Code Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free) Si2311DS-T1-GE3 (Lead (Pb)-free and Halogen-free)ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS - 8 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID - 3.5 - 2.8 - 3.0 - 2.4 Pulsed Drain Current IDM - 10 Continuous Source Current (Diode Conduction)a, b IS - 0.8 - 0.6 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 0.96 0.71 0.62 0.46 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t≤5s Steady State Steady State Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Symbol RthJA RthJF Document Number: 71813 S-80642-Rev.
