Vishay SI3552DV
N- and P-Channel 30-V (D-S) MOSFET
| Part No. | SI3552DV |
|---|---|
| Datasheet | SI3552DV Download |
| Manufacturer |  Vishay |
| Description | N- and P-Channel 30-V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC G1 3 mm S2 G2 TSOP-6 Top View 16 25 34 D1 S1 D2 D1 S2 G2 G1 2.85 mm Ordering Information: Si3552DV -T1-E3 (Lead (Pb)-free) Si3552DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 2.5 - 1.8 2.0 - 1.2 Pulsed Drain Current IDM 8 -7 Continuous Source Current (Diode Conduction)a, b IS 1.05 - 1.05 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 1.15 0.73 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Maximum Junction-to-Lead Steady State Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s.
