Vishay SI3588DV
N- and P-Channel 20-V (D-S) MOSFET
| Part No. | SI3588DV |
|---|---|
| Datasheet | SI3588DV Download |
| Manufacturer |  Vishay |
| Description | N- and P-Channel 20-V (D-S) MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.05 1.15 0.73 0.75 0.83 0.53 –55 to 150 P-Channel 5 secs Steady State –20 "8 V –2.2 –1.8 "8 –1.05 1.15 0.73 –0.75 0.083 0.53 W _C –0.57 –1.5 A Symbol VDS VGS 5 secs Steady State 20 Unit 3.0 2.3 2.5 2.0 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71332 S-02383—Rev. A, 23-Oct-00 Steady State Steady State RthJA RthJF Symbol Typical 93 130 90 Maximum 110 150 90 Unit _C/W 1 Si3588DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(t...
