SI3900DV Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 5 sec 20 Steady State "12 Unit V 2.4 ID IDM IS PD TJ, Tstg 1.05 1.15 0.59 –55 to 150 1.7 8 2.0 1.4 A 0.75 0.83 0.53 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71178 S-03511—Rev. B, 16-Apr-01 Steady State Steady State RthJA RthJF Symbol Typical 93 130 75 Maximum 110 150 90 Unit _C/W 1 Si3900DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State...