SI4286DY Description
Dual N-Channel 40 V (D-S) MOSFET Si4286DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 40 0.0325 at VGS = 10 V 0.040 at VGS = 4.5 V ID (A)a 7 6.3 Qg (Typ.) 3.3.
SI4286DY Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Gen III Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- pliant to RoHS Directive 2002/95/EC