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SI4336DY Datasheet PDF

Vishay SI4336DY

N-Channel 30-V (D-S) MOSFET

Part No. SI4336DY
Datasheet SI4336DY Download
Manufacturer
Vishay
Description N-Channel 30-V (D-S) MOSFET
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SI4336DY datasheet page 1 preview

FEATURES

● Ultra Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology
● Qg Optimized
● 100 % Rg Tested

APPLICATIONS

● Synchronous Buck Low-Side - Notebook - Server - Workstation
● Synchronous Rectifier, POL D G S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 25 20 17 13 Pulsed Drain Current (10 µs Pulse Width) IDM 70 Continuous Source Current (Diode Conduction)a IS 2.9 1.3 Avalanche Current L = 0.1 mH IAS 50 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.5 2.2 1.6 1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Available RoHS* COMPLIANT Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t ≤ 10 sec Steady State Steady State Symbol RthJA RthJF * Pb containing terminations are not RoHS compliant, exemptions may apply.
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