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Si4462DY
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
200
D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching ID (A)
1.50 1.45
rDS(on) (W)
0.480 @ VGS = 10 V 0.510 @ VGS = 6.0 V
APPLICATIONS
D Primary Side Switch
D
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Single Avalanch Current Single Avalanch Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
200 "20 1.
SI4462DY Datasheet
