Vishay SI4493DY
P-Channel MOSFET
FEATURES
ID (A) - 14 rDS(on) (W) 0.00775 @ VGS = - 4.5 V D TrenchFETr Power MOSFETAPPLICATIONS
D Load Switch S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si4493DY Si4493DY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D D D D GABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 11 IDM IS - 2.7 3.0 1.9 - 55 to 150 - 50 - 1.36 1.5 0.95 W _C -8 A Symbol VDS VGS 10 secs Steady State - 20 "12 Unit V - 14 - 10 THERMAL RESISTANCE RATINGS Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72256 S-31420—Rev. A, 07-Jul-03 Steady State Steady State RthJA RthJF Symbol Typical 3...