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Si4558DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 30
rDS(on) (W)
0.040 @ VGS = 10 V 0.060 @ VGS = 4.5 V
ID (A)
"6 "4.8 "6 "4.4
P-Channel
–30
0.040 @ VGS = –10 V 0.070 @ VGS = –4.5 V
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
N-Channel
30 "20 "6 "4.7 "30 2 2.4
P-Channel
–30 "20 "6 "4.7 "30 –2
Unit
V
A
W 1.