Vishay SI4804DY
Dual N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4804DY Si4804DY-T1 (with Tape and Reel) Si4804DY—E3 (Lead (Pb)-Free) Si4804DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 "20 7.5 5.7 6.0 4.6 20 1.7 0.9 10 5 2