Vishay SI4816DY
Dual N-Channel MOSFET
| Part No. | SI4816DY |
|---|---|
| Datasheet | SI4816DY Download |
| Manufacturer |  Vishay |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● LITTLE FOOT® Plus Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC D1 G1 A/S2 A/S2 G2 1 2 3 4 SO-8 8 D1 7 D2/S1 6 D2/S1 5 D2/S1 Top View Ordering Information: Si4816DY-T1-E3 (Lead (Pb)-free) Si4816DY-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 Schottky Diode A
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Channel-1 Channel-2 Parameter Symbol 10 s Steady State 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 6.3 5.4 5.3 10 7.7 4.2 8.2 6.2 Pulsed Drain Current IDM 30 40 Continuous Source Current (Diode Conduction)a IS 1.3 0.9 2.2 1.15 Avalanche Currentb Single Pulse Avalanche Energyb L = 0.1 mH IAS EAS 12 7.2 25 31.25 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.4 0.9 1.0 2.4 1.25 0.64 1.5 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a.
