Vishay SI5902DC
The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.| Part No. | SI5902DC |
|---|---|
| Datasheet | SI5902DC Download |
| Manufacturer |  Vishay |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFETs
● Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code CA XX Lot Traceability and Date Code Bottom View Part # Code Ordering Information: Si5902DC-T1-E3 (Lead (Pb)-free) Si5902DC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 85 °C ID ± 3.9 ± 2.8 ± 2.9 ± 2.1 A IDM ± 10 Continuous Source Current (Diode Conduction)a IS 1.8 0.9 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.1 1.1 1.1 0.6 W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TJ, Tstg - 55 to 150 °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta Maximum Junction-to-Foot t5s 50 Steady State RthJA 90 Steady State RthJF 30 60 110 °C/W 40 Notes: a.
