Vishay SI5903DC
The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.| Part No. | SI5903DC |
|---|---|
| Datasheet | SI5903DC Download |
| Manufacturer |  Vishay |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFETs
● Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 D2 G2 Marking Code DA XX Lot Traceability and Date Code Bottom View Part # Code Ordering Information: Si5903DC-T1-E3 (Lead (Pb)-free) Si5903DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID ± 2.9 ± 2.1 ± 2.1 ± 1.5 Pulsed Drain Current IDM ± 10 Continuous Source Current (Diode Conduction)a IS - 1.8 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.1 1.1 1.1 0.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)b, c 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t≤5s Steady State RthJA 50 90 60 110 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 Notes: a.
