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SI5948DU - MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested.
  • New thermally enhanced PowerPAK® ChipFET® package - Small footprint area - Low on-resistance - Thin 0.8 mm profile.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription for SI5948DU (Reference)

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www.vishay.com Si5948DU Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. 0.082 at VGS = 10 V 0.094 at VGS = 4.5 V ID (A) 6a 6...

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RDS(on) () MAX. 0.082 at VGS = 10 V 0.094 at VGS = 4.5 V ID (A) 6a 6a Qg (TYP.) 2.2 nC PowerPAK® ChipFET® Dual D2 D2 6 D1 7 D1 8 5 1 3.0 mm Top View 1 4 G2 3 S2 2 G1 S1 Bottom View 1.9 mm Marking Code: CG Ordering Information: Si5948DU-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • New thermally enhanced PowerPAK® ChipFET® package - Small footprint area - Low on-resistance - Thin 0.8 mm profile • Material categorization: for definitions of compliance please see www.vishay.