SI6880EDQ Datasheet PDF

FEATURES

ID (A) 7.5 6.5 6.0 D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain

APPLICATIONS

D 1-2 Cell Battery Protection Circuitry D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View S1 N-Channel *Typical value by design N-Channel S2 D 8 D 7 S2 6 S2 5 G2 *1.5 kW G1 G2 *1.5 kW Si6880EDQ

ABSOLUTE MAXIMUM RATINGS

(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.6 1.78 1.14 –55 to 150 Symbol VDS VGS 10 secs T20 "12 7.5 6 30 Steady State Unit V 6 5 A 1.08 1.19 0.76 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec. Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain)a Steady State Steady State RthJA RthJF Symbol Typical 55 85 35 Maximum 70 105 45 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec.