Vishay SI7356DP
N-Channel MOSFET
| Part No. | SI7356DP |
|---|---|
| Datasheet | SI7356DP Download |
| Manufacturer |  Vishay |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm ProfileAPPLICATIONS
D Low-Side DC/DC Conversion – Notebook – Server – Workstation D Point-of-Load Conversion D G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 30 "20 30 18 25 15 70 4.5 1.8 5.4 1.9 3.4 1.2 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72222 S-41905—Rev. C, 14-...
