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SI7615CDN - MOSFET

Key Features

  • TrenchFET® Gen III p-channel power MOSFET.
  • RDS(on) rating at VGS = -1.8 V.
  • 100 % Rg and UIS tested.
  • Material categorization:  for definitions of compliance www. vishay. com/doc?99912 please see.

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Full PDF Text Transcription (Reference)

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www.vishay.com Si7615CDN Vishay Siliconix P-Channel 20 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -3.7 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) a, g Configuration 1 2S 3S 4S G Bottom View -20 0.0090 0.0100 0.0117 0.0203 42 -35 Single FEATURES • TrenchFET® Gen III p-channel power MOSFET • RDS(on) rating at VGS = -1.8 V • 100 % Rg and UIS tested • Material categorization:  for definitions of compliance www.vishay.