Vishay SI7703EDN
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
| Part No. | SI7703EDN |
|---|---|
| Datasheet | SI7703EDN Download |
| Manufacturer |  Vishay |
| Description | Single P-Channel 20-V (D-S) MOSFET With Schottky Diode |
| Buy | Stock & Price |
FEATURES
ID (A) –6.3 –5.3 –4.6 rDS(on) (W) 0.048 @ VGS = –4.5 V 0.068 @ VGS = –2.5 V 0.090 @ VGS = –1.8 V D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm ProfileAPPLICATIONS
D Charger Switching SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 1.0 PowerPAKt 1212-8 S K 3.30 mm A 1 2 3.30 mm A S 3 4 K G G K 8 7 3 kW D 6 5 D D P-Channel MOSFET A Bottom ViewABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1” x1” FR4 Board.
