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SI7941DP - Dual P-Channel 30-V (D-S) MOSFET

General Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive.

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Datasheet Details

Part number SI7941DP
Manufacturer Vishay
File Size 296.53 KB
Description Dual P-Channel 30-V (D-S) MOSFET
Datasheet download datasheet SI7941DP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPICE Device Model Si7941DP www.DataSheet4U.com Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.