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SI8902AEDB - N-channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • Small 2.4 mm x 1.6 mm outline.
  • Thin 0.6 mm max. height.
  • Typical ESD protection 5000 V (HBM).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

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www.vishay.com Si8902AEDB Vishay Siliconix N-Channel 24 V (D-S) MOSFET PRODUCT SUMMARY VS1S2 (V) 24 RS1S2 (Ω) Max. 0.028 at VGS = 4.5 V 0.029 at VGS = 3.7 V 0.031 at VGS = 2.5 V 0.037 at VGS = 1.8 V IS1S2 (A) a 5.9 5.8 5.6 5.1 MICRO FOOT® 2.4 x 1.6 S1 G1 2 8902xAxxE S2 3 4 1.6 mm 1 2.4 mm Backside View 6 5 G2 S2 Bump Side View 1 S1 FEATURES • TrenchFET® power MOSFET • Small 2.4 mm x 1.6 mm outline • Thin 0.6 mm max. height • Typical ESD protection 5000 V (HBM) • Material categorization: for definitions of compliance please see www.vishay.