SIA477EDJT Description
() at VGS = -4,5 V RDS(on) max. () at VGS = -3.7 V RDS(on) max. () at VGS = -2.5 V RDS(on) max.
SIA477EDJT Key Features
- TrenchFET® Gen III p-channel power MOSFET
- Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
- 100 % Rg tested
- RDS(on) rating at VGS = -1.8 V
- Built in ESD protection with Zener diode
- Typical ESD performance: 3500 V
- Material categorization: for definitions of pliance please see .vishay./doc?99912