Datasheet4U Logo Datasheet4U.com

SIA918EDJ - MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance.
  • Typical ESD protection: 1000 V (HBM).
  • 100 % Rg tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIA911DJ Dual P-Channel MOSFET Vaishali Semiconductor
SIA921EDJ Dual P-Channel 20-V (D-S) MOSFET Vishay Siliconix
SIA923EDJ Dual P-Channel 20-V (D-S) MOSFET Vishay Siliconix
SIA414DJ Dual N-Channel 8-V (D-S) MOSFET Vishay Siliconix
SIA429DJT P-Channel 20V (D-S) MOSFET Vishay Siliconix

Other Datasheets by Vishay

Part Number Description
SiA910EDJ Dual N-Channel 12 V (D-S) MOSFET
SiA911ADJ Dual P-Channel 20-V (D-S) MOSFET
SIA912DJ MOSFET
SiA913ADJ Dual P-Channel 12-V (D-S) MOSFET
SiA914ADJ Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com SiA918EDJ Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.058 at VGS = 4.5 V 0.065 at VGS = 2.5 V 0.077 at VGS = 1.8 V ID (A) 4.5 a 4.5 a 4.5 a Qg (TYP.) 3.6 nC PowerPAK® SC-70-6L Dual D1 G2 6 S2 5 4 D2 D1 2.05 mm 1 2.05 mm Top View 2 3 G1 D2 Bottom View 1 S1 Marking Code: CL Ordering Information: SiA918EDJ-T1-GE3 (lead (Pb)-free and halogen free) FEATURES • TrenchFET® power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1000 V (HBM) • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.