SIB410DK Description
New Product SiB410DK Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.042 at VGS = 4.5 V 30 0.046 at VGS = 2.5 V 0.052 at VGS = 1.8 V ID (A)a 9 9 9 5.7 nC Qg.
SIB410DK Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC