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SiHA25N60EFL
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode and Low Gate Charge
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
75 17 19 Single
0.127
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
FEATURES
• Reduced figure-of-merit (FOM): Ron x Qg
• Fast body diode MOSFET using E series technology
• Reduced trr, Qrr, and IRRM • Increased robustness due to low Qrr • Low input capacitance (Ciss) • Reduced switching and conduction losses
Available
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.