SIHD12N50E Overview
SiHD12N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 50 6 10 Single 0.380 DPAK (TO-252) D S G D G S N-Channel MOSFET.
SIHD12N50E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance
