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SIHFD113 - Power MOSFET

General Description

The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.

Key Features

  • For Automatic Insertion.
  • Compact Plastic Package.
  • End Stackable.
  • Fast Switching.
  • Low Drive Current.
  • Easily Paralleled.
  • Excellent Temperature Stability.
  • Compliant to RoHS Directive 2002/95/EC Note.
  • Pb containing terminations are not RoHS compliant, exemptions may apply.

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Full PDF Text Transcription for SIHFD113 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SIHFD113. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com IRFD113, SiHFD113 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 7 2 7 Sing...

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g (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 7 2 7 Single 0.8 HVMDIP S G D D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES • For Automatic Insertion • Compact Plastic Package • End Stackable • Fast Switching • Low Drive Current • Easily Paralleled • Excellent Temperature Stability • Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors.

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