Datasheet Summary
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single
Features
- Low Figure-of-Merit Ron x Qg
- 100 % Avalanche Tested
- Gate Charge Improved
- Trr/Qrr Improved
- pliant to RoHS Directive 2002/95/EC
TO-247AC
G S D G S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free TO-247AC...