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SIHG16N50C - Power MOSFET

Key Features

  • Low Figure-of-Merit Ron x Qg 0.38.
  • 100 % Avalanche Tested.
  • Gate Charge Improved.
  • Trr/Qrr Improved.
  • Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET.

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SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single D FEATURES • Low Figure-of-Merit Ron x Qg 0.