SIHG47N60EF Description
SiHG47N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 228 32 62 Single 0.065 TO-247AC D G S D G S N-Channel MOSFET .
SIHG47N60EF Key Features
- Fast body diode MOSFET using E series technology
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Increased robustness due to low Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance