SIHL630 Description
G S G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low and low package cost of the TO-220 contribute to its wide acceptance...
SIHL630 Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Logic Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 150 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Lead (Pb)-free Available