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IRL630, SiHL630
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.5 24 Single
D
FEATURES
200 V 0.40
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 150 °C Operating Temperature • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
G S G D S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
SIHL630 Datasheet
