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SIHL630 Datasheet Power MOSFET

Manufacturer: Vishay

Overview: IRL630, SiHL630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.

General Description

G S G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W.

The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Key Features

  • 200 V 0.40.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Logic Level Gate Drive.
  • RDS(on) Specified at VGS = 4 V and 5 V.
  • 150 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Lead (Pb)-free Available Available RoHS.

SIHL630 Distributor