SIHL630 - Power MOSFET

Vishay

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

200 V 0.40.
Dynamic dV/dt Rating.
Repetitive Avalanche Rated.
Logic Level Gate Drive.
RDS(on) Specified at VGS = 4 V and 5 V.
150 °C Operating Temperature.
Fast Switching.
Ease of Paralleling.
Lead (Pb)-free Available Available RoHS.

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SIHL630 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SIHL630
Manufacturer	Vishay
File Size	1.90 MB
Description	Power MOSFET
Datasheet	SIHL630 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRL630, SiHL630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.5 24 Single D FEATURES 200 V 0.40 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 150 °C Operating Temperature • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 DESCRIPTION G S G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.