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SIHLR120 - Power MOSFET

Download the SIHLR120 datasheet PDF. This datasheet also covers the SIHLU120 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Surface-mount (IRLR120, SiHLR120).
  • Straight lead (IRLU120, SiHLU120).
  • Available in tape and reMel.
  • Logic-level gate drive Available.
  • RDS(on) specified at VGS = 4 V and 5 V.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SIHLU120_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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SIHLU014 Power MOSFET Vishay Siliconix

Other Datasheets by Vishay

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 12 0.27 3.0 7.1 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRLR120, SiHLR120) • Straight lead (IRLU120, SiHLU120) • Available in tape and reMel • Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V • Material categorization: for definitions of compliance please see www.vishay.