SM8S10 Overview
SM8S10A thru SM8S43A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-218AB Cathode Anode PRIMARY CHARACTERISTICS VBR VWM PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max. Polarity 11.1 V to 52.8 V 10 V to 43 V 6600 W 5200 W 8W 700 A 175 °C Unidirectional Package DO-218AB.
SM8S10 Key Features
- Junction passivation optimized design passivated
- TJ = 175 °C capability suitable for high reliability
- Available in unidirectional polarity only
- Low leakage current
- Low forward voltage drop
- High surge capability
- Meets ISO7637-2 surge specification (varied by test
- AEC-Q101 qualified
- Material categorization: for definitions of pliance
SM8S10 Applications
- RoHS-pliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 s
