SM8S11AT Overview
SM8S10AT thru SM8S43AT Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-218 patible PRIMARY CHARACTERISTICS VBR PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD VWM IFSM TJ max. Polarity 11.1 V to 52.8 V 6600 W 5200 W 8W 10 V to 43 V 700 A 175 °C Uni-directional Package DO-218AC.
SM8S11AT Key Features
- Junction passivation optimized design passivated
- TJ = 175 °C capability suitable for high reliability
- Available in uni-directional polarity only
- Low leakage current
- Low forward voltage drop
- High surge capability
- Meets ISO7637-2 surge specification (varied by test
- AEC-Q101 qualified
- Automotive ordering code: base P/NHE3
- Material categorization: for definitions of pliance
SM8S11AT Applications
- RoHS-pliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Pol
