SS1H10 Description
SS1H9, SS1H10 Vishay General Semiconductor High-Voltage Surface-Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance SMA (DO-214AC) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. Package 1.0 A 90 V, 100 V 50 A 0.62 V 1.0 μA 175 °C SMA (DO-214AC) Circuit configuration Single.
SS1H10 Key Features
- Low profile package
- Ideal for automated placement
- Guardring for overvoltage protection
- Low power losses, high efficiency
- Low forward voltage drop
- Low leakage current
- High surge capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3